SI4403DDY-T1-GE3

Product Overview

Category

The SI4403DDY-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in various electronic applications for switching and amplification purposes.

Characteristics

• Low on-resistance
• High current capability
• Fast switching speed
• Low gate charge

Package

The SI4403DDY-T1-GE3 is typically available in a small outline package (SOP) or a dual flat no-leads (DFN) package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is usually supplied in reels with a quantity ranging from 3000 to 5000 units per reel.

Specifications

• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 9.2A
• On-Resistance (RDS(on)): 16mΩ
• Power Dissipation (PD): 2.5W
• Gate-Source Voltage (VGS): ±20V
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI4403DDY-T1-GE3 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

• Low on-resistance for minimal power loss
• Fast switching speed for improved efficiency
• High current capability for robust performance
• Enhanced thermal performance for reliability

Advantages

• Efficient power management
• Reduced heat dissipation
• Enhanced system reliability
• Improved overall performance

Disadvantages

• Sensitivity to electrostatic discharge (ESD)
• Limited voltage handling capability

Working Principles

The SI4403DDY-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.

Detailed Application Field Plans

The SI4403DDY-T1-GE3 is widely used in: - Switching power supplies - DC-DC converters - Motor control systems - Battery management systems - LED lighting applications

Detailed and Complete Alternative Models

• SI2301DS-T1-GE3
• SI2337DS-T1-GE3
• SI2365DS-T1-GE3
• SI2391DS-T1-GE3

In conclusion, the SI4403DDY-T1-GE3 power MOSFET offers high-performance characteristics suitable for a wide range of electronic applications, providing efficient power management and control. Its specifications, functional features, advantages, and detailed application field plans make it a valuable component in modern electronic designs.

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