SI4411DY-T1-E3

Product Category: Integrated Circuit

Basic Information Overview: - Category: Power MOSFET - Use: Switching applications in power supplies, converters, and motor control - Characteristics: High efficiency, low on-resistance, fast switching speed - Package: SOIC-8 - Essence: Power management - Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications: - Drain-Source Voltage (Vdss): 30V - Continuous Drain Current (Id): 6.7A - On-Resistance (Rds(on)): 12mΩ - Gate-Source Voltage (Vgs): ±20V - Threshold Voltage (Vgs(th)): 1-2V - Input Capacitance (Ciss): 1500pF - Output Capacitance (Coss): 300pF - Reverse Transfer Capacitance (Crss): 200pF

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Not connected - Pin 5: Not connected - Pin 6: Not connected - Pin 7: Not connected - Pin 8: Source

Functional Features: - Low gate charge - Enhanced 30V VDSS capability - Improved dv/dt capability - RoHS compliant

Advantages: - High efficiency - Fast switching speed - Suitable for various power management applications

Disadvantages: - Relatively higher input capacitance compared to some alternative models - Limited maximum drain-source voltage compared to certain alternatives

Working Principles: The SI4411DY-T1-E3 operates based on the principles of field-effect transistors, utilizing the control of voltage applied to the gate terminal to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans: - Power supplies - DC-DC converters - Motor control circuits - Battery management systems

Detailed and Complete Alternative Models: - Infineon IPP60R125CPXKSA1 - ON Semiconductor NTMFS4C06N - Vishay Si7157DP

This comprehensive entry provides a detailed overview of the SI4411DY-T1-E3, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.