SI4850EY-T1

Product Overview

Category

The SI4850EY-T1 belongs to the category of power MOSFETs.

Use

It is used for switching and amplifying electronic signals in various applications.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The SI4850EY-T1 is available in a standard TO-263 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

The SI4850EY-T1 is typically packaged in reels with a quantity of 2500 units per reel.

Specifications

• Drain-Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 9.5A
• RDS(ON) (Max) @ VGS = 10V: 18mΩ
• Gate-Source Voltage (Vgs): ±20V
• Total Gate Charge (Qg): 15nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI4850EY-T1 has a standard pin configuration with three pins: Gate, Drain, and Source.

Functional Features

• High voltage capability allows for use in a wide range of applications.
• Low on-resistance minimizes power loss and improves efficiency.
• Fast switching speed enables rapid response in switching applications.

Advantages

• High voltage capability makes it suitable for diverse applications.
• Low on-resistance reduces power dissipation and heat generation.
• Fast switching speed enhances overall system performance.

Disadvantages

• May require careful consideration of gate drive circuitry due to high gate charge.
• Limited to a maximum operating temperature of 150°C.

Working Principles

The SI4850EY-T1 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.

Detailed Application Field Plans

The SI4850EY-T1 is commonly used in: - Power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the SI4850EY-T1 include: - SI4848DY-T1-GE3 - SI4866DY-T1-GE3 - SI4894DY-T1-GE3

In conclusion, the SI4850EY-T1 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of applications in power management and control.

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