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SI4858DY-T1-GE3

SI4858DY-T1-GE3

Product Overview

Category

The SI4858DY-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

  • High efficiency
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SI4858DY-T1-GE3 is typically available in a compact and industry-standard PowerPAK SO-8 package.

Essence

This MOSFET is essential for efficient power control and management in various electronic devices and systems.

Packaging/Quantity

It is usually supplied in reels with a quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 9.7A
  • RDS(ON) (Max) @ VGS = 10V: 8.5mΩ
  • Gate-Source Voltage (Vgs): ±20V
  • Total Power Dissipation (PD): 2.5W

Detailed Pin Configuration

The SI4858DY-T1-GE3 follows the standard pin configuration for a PowerPAK SO-8 package: 1. GATE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. DRAIN 7. DRAIN 8. SOURCE

Functional Features

  • Low on-resistance for minimal power loss
  • Fast switching speed for efficient operation
  • Wide operating voltage range for versatility
  • Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages

  • High efficiency
  • Compact package size
  • Suitable for high-frequency applications

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The SI4858DY-T1-GE3 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

Voltage Regulation

The MOSFET can be used in voltage regulator circuits to efficiently control and stabilize output voltages in various electronic devices.

Switching Circuits

Its fast switching speed makes it suitable for use in switching circuits, enabling rapid on/off transitions for power control.

Detailed and Complete Alternative Models

  • SI7856ADP-T1-GE3
  • SI4956ADY-T1-GE3
  • SI3865BDV-T1-GE3
  • SI7896CDP-T1-GE3

In conclusion, the SI4858DY-T1-GE3 power MOSFET offers high efficiency, fast switching speed, and versatile application in power management circuits. Its compact package and advanced characteristics make it an essential component in modern electronic systems.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق SI4858DY-T1-GE3 في الحلول التقنية

  1. What is the maximum voltage rating of SI4858DY-T1-GE3?

    • The maximum voltage rating of SI4858DY-T1-GE3 is 30V.
  2. What is the maximum continuous drain current for SI4858DY-T1-GE3?

    • The maximum continuous drain current for SI4858DY-T1-GE3 is 8.7A.
  3. What is the typical on-resistance of SI4858DY-T1-GE3?

    • The typical on-resistance of SI4858DY-T1-GE3 is 9.5mΩ.
  4. Can SI4858DY-T1-GE3 be used in automotive applications?

    • Yes, SI4858DY-T1-GE3 is suitable for automotive applications.
  5. Does SI4858DY-T1-GE3 have overcurrent protection?

    • No, SI4858DY-T1-GE3 does not have built-in overcurrent protection.
  6. What is the operating temperature range of SI4858DY-T1-GE3?

    • The operating temperature range of SI4858DY-T1-GE3 is -55°C to 150°C.
  7. Is SI4858DY-T1-GE3 RoHS compliant?

    • Yes, SI4858DY-T1-GE3 is RoHS compliant.
  8. What is the package type of SI4858DY-T1-GE3?

    • SI4858DY-T1-GE3 comes in a PowerPAK SO-8 package.
  9. Can SI4858DY-T1-GE3 be used in high-frequency switching applications?

    • Yes, SI4858DY-T1-GE3 is suitable for high-frequency switching applications.
  10. Does SI4858DY-T1-GE3 require an external gate driver?

    • It is recommended to use an external gate driver for optimal performance with SI4858DY-T1-GE3.