SI4886DY-T1-E3
Product Overview
Category
SI4886DY-T1-E3 belongs to the category of power MOSFETs.
Use
It is used as a power switch in various electronic circuits and applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SI4886DY-T1-E3 comes in a standard DPAK (TO-252) package.
Essence
The essence of this product lies in its ability to efficiently control power flow in electronic devices.
Packaging/Quantity
The SI4886DY-T1-E3 is typically packaged in reels with a quantity of 2500 units per reel.
Specifications
- Drain-Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 48A
- RDS(ON) (Max) @ Vgs=10V: 4.5mΩ
- Gate-Source Voltage (Vgs): ±20V
- Power Dissipation (Pd): 2.5W
Detailed Pin Configuration
The pin configuration of SI4886DY-T1-E3 is as follows: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low power dissipation
- High current handling capability
- Suitable for high-frequency applications
- Enhanced thermal performance
Advantages
- Efficient power management
- Reduced heat generation
- Fast response time
- Compact form factor
Disadvantages
- Sensitive to electrostatic discharge
- Requires careful handling during assembly
Working Principles
The SI4886DY-T1-E3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
This MOSFET is commonly used in: - Switching power supplies - Motor control circuits - LED lighting applications - Battery management systems
Detailed and Complete Alternative Models
Some alternative models to SI4886DY-T1-E3 include: - SI4886DY-T1-GE3 - SI4886DY-T1-RE3 - SI4886DY-T1-E4
In conclusion, the SI4886DY-T1-E3 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, making it a versatile component in modern electronic designs.
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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق SI4886DY-T1-E3 في الحلول التقنية
Sure, here are 10 common questions and answers related to the application of SI4886DY-T1-E3 in technical solutions:
What is the maximum drain-source voltage (Vds) for SI4886DY-T1-E3?
- The maximum drain-source voltage for SI4886DY-T1-E3 is 30V.
What is the continuous drain current (Id) for SI4886DY-T1-E3?
- The continuous drain current for SI4886DY-T1-E3 is 12A.
What is the on-resistance (Rds(on)) for SI4886DY-T1-E3?
- The on-resistance for SI4886DY-T1-E3 is typically 8.5mΩ at Vgs=10V.
What is the gate threshold voltage (Vgs(th)) for SI4886DY-T1-E3?
- The gate threshold voltage for SI4886DY-T1-E3 is typically 1.5V.
What is the power dissipation (Pd) for SI4886DY-T1-E3?
- The power dissipation for SI4886DY-T1-E3 is 2.5W.
What are the typical applications for SI4886DY-T1-E3?
- SI4886DY-T1-E3 is commonly used in power management, load switching, and battery protection applications.
What is the operating temperature range for SI4886DY-T1-E3?
- The operating temperature range for SI4886DY-T1-E3 is -55°C to 150°C.
Is SI4886DY-T1-E3 suitable for automotive applications?
- Yes, SI4886DY-T1-E3 is AEC-Q101 qualified and suitable for automotive applications.
What package type does SI4886DY-T1-E3 come in?
- SI4886DY-T1-E3 is available in a PowerPAK SO-8 package.
Are there any recommended external components or circuit configurations when using SI4886DY-T1-E3?
- It is recommended to refer to the datasheet for specific application circuits and external component recommendations based on the intended use case.
I hope these answers provide the information you were looking for! If you have any more questions, feel free to ask.