SI4888DY-T1-GE3

Product Overview

Category

The SI4888DY-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

• High power handling capability
• Low on-resistance
• Fast switching speed
• Low gate drive requirements

Package

The SI4888DY-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.

Essence

This MOSFET is essential for efficient power control and management in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels containing a quantity of 3000 units per reel.

Specifications

• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 11A
• RDS(ON) (Max) @ VGS = 10V: 5.5mΩ
• Gate-Source Voltage (VGS): ±20V
• Total Gate Charge (Qg): 18nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI4888DY-T1-GE3 features a standard SO-8 pin configuration: 1. Gate 2. Source 3. Drain 4. N/C 5. N/C 6. Drain 7. Source 8. Gate

Functional Features

• Low on-resistance for minimal power dissipation
• High current-handling capability for power management applications
• Fast switching speed for efficient operation
• Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages

• Efficient power handling
• Fast switching speed
• Compact package size

Disadvantages

• Higher cost compared to traditional power transistors
• Sensitive to electrostatic discharge (ESD)

Working Principles

The SI4888DY-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The SI4888DY-T1-GE3 is widely used in various applications, including: - DC-DC converters - Voltage regulation circuits - Motor control systems - Power supply units

Detailed and Complete Alternative Models

Some alternative models to the SI4888DY-T1-GE3 include: - SI4888DY-T1-E3 - SI4888DY-T1-RE3 - SI4888DY-T1-GE3-ND

In conclusion, the SI4888DY-T1-GE3 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, making it an essential component in modern electronic systems.

[Word count: 411]