SI4894BDY-T1-GE3
Product Overview
Category
The SI4894BDY-T1-GE3 belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications, such as voltage regulation and power switching.
Characteristics
- High efficiency
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SI4894BDY-T1-GE3 is typically available in a small outline package (SOP) or a dual flat no-leads (DFN) package.
Essence
This MOSFET is essential for efficient power control and management in various electronic devices and systems.
Packaging/Quantity
It is usually supplied in reels with a quantity ranging from 2500 to 5000 units per reel.
Specifications
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 20A
- On-Resistance (RDS(on)): 6.5mΩ
- Power Dissipation (PD): 2.5W
- Gate-Source Voltage (VGS): ±20V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SI4894BDY-T1-GE3 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- Low power dissipation
- Enhanced thermal performance
- High current-carrying capability
- Compatibility with low-voltage control signals
Advantages and Disadvantages
Advantages
- High efficiency in power management
- Fast response time
- Compact package size
- Suitable for high-frequency applications
Disadvantages
- Sensitivity to electrostatic discharge (ESD)
- Limited voltage tolerance
Working Principles
The SI4894BDY-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching characteristics to regulate and control power flow within electronic circuits.
Detailed Application Field Plans
This MOSFET is widely used in: - DC-DC converters - Voltage regulators - Motor control circuits - Battery management systems - LED lighting applications
Detailed and Complete Alternative Models
Some alternative models to the SI4894BDY-T1-GE3 include: - SI4895BDY-T1-GE3 - SI4896BDY-T1-GE3 - SI4897BDY-T1-GE3 - SI4898BDY-T1-GE3
In conclusion, the SI4894BDY-T1-GE3 power MOSFET offers high efficiency and fast switching capabilities, making it an ideal choice for various power management applications. Its compact package and functional features make it suitable for a wide range of electronic systems and devices.
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What is the maximum voltage rating for SI4894BDY-T1-GE3?
- The maximum voltage rating for SI4894BDY-T1-GE3 is typically 30V.
What is the maximum current rating for SI4894BDY-T1-GE3?
- The maximum continuous drain current for SI4894BDY-T1-GE3 is typically around 8A.
What is the on-resistance (RDS(on)) of SI4894BDY-T1-GE3?
- The typical on-resistance for SI4894BDY-T1-GE3 is around 10mΩ.
What are the recommended applications for SI4894BDY-T1-GE3?
- SI4894BDY-T1-GE3 is commonly used in power management, load switching, and battery protection applications.
What is the operating temperature range for SI4894BDY-T1-GE3?
- SI4894BDY-T1-GE3 typically operates within a temperature range of -55°C to 150°C.
Does SI4894BDY-T1-GE3 require external gate drivers?
- No, SI4894BDY-T1-GE3 features a built-in gate driver and can be directly driven by logic level signals.
What is the package type for SI4894BDY-T1-GE3?
- SI4894BDY-T1-GE3 is available in a PowerPAK® SO-8 package.
Is SI4894BDY-T1-GE3 suitable for automotive applications?
- Yes, SI4894BDY-T1-GE3 is AEC-Q101 qualified and suitable for automotive applications.
What are the key features of SI4894BDY-T1-GE3?
- Some key features include low on-resistance, high current capability, and over-temperature protection.
Are there any application notes or reference designs available for SI4894BDY-T1-GE3?
- Yes, application notes and reference designs are available from the manufacturer's website to assist with integrating SI4894BDY-T1-GE3 into technical solutions.