SI4966DY-T1-GE3

Product Overview

Category

The SI4966DY-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

• Low on-resistance
• High current handling capability
• Fast switching speed
• Low gate drive requirements

Package

The SI4966DY-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.

Essence

This MOSFET offers high efficiency and reliability in power management systems.

Packaging/Quantity

It is usually supplied in reels with a quantity of 3000 units per reel.

Specifications

• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 18A
• RDS(ON) (Max) @ VGS = 10V: 4.5mΩ
• Gate-Source Voltage (VGS): ±20V
• Total Gate Charge (Qg): 22nC

Detailed Pin Configuration

The SI4966DY-T1-GE3 features the following pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low on-resistance for minimal power dissipation
• High current handling capability for robust performance
• Fast switching speed for efficient power management

Advantages

• Enhanced power efficiency
• Reliable performance in demanding applications
• Compact form factor for space-constrained designs

Disadvantages

• Higher cost compared to standard MOSFETs
• Sensitive to static discharge if mishandled

Working Principles

The SI4966DY-T1-GE3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can efficiently regulate and switch high-power loads.

Detailed Application Field Plans

The SI4966DY-T1-GE3 is well-suited for various power management applications, including: - DC-DC converters - Voltage regulators - Motor control circuits - Power supplies

Detailed and Complete Alternative Models

Some alternative models to the SI4966DY-T1-GE3 include: - SI2301DS-T1-GE3 - SI2337DS-T1-GE3 - SI7469DP-T1-GE3 - SI7850DP-T1-GE3

In conclusion, the SI4966DY-T1-GE3 power MOSFET offers high-performance characteristics and is suitable for a wide range of power management applications, making it a versatile choice for engineers seeking efficient and reliable solutions.

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