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SI5401DC-T1-E3

SI5401DC-T1-E3

Product Overview

Category

SI5401DC-T1-E3 belongs to the category of integrated circuits (ICs).

Use

It is used as a dual N-channel MOSFET switch.

Characteristics

  • Low on-resistance
  • Fast switching speed
  • Low gate drive voltage
  • Small package size

Package

SI5401DC-T1-E3 is available in a small outline package (SOP-8).

Essence

The essence of SI5401DC-T1-E3 lies in its ability to efficiently switch high currents with minimal power loss.

Packaging/Quantity

It is typically packaged in reels and available in quantities suitable for production runs.

Specifications

  • Drain-to-Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 4.3A
  • Rds(on) (Max) @ Vgs: 25 mOhm @ 10V
  • Input Capacitance (Ciss): 1100pF
  • Power Dissipation (Pd): 2.5W

Detailed Pin Configuration

SI5401DC-T1-E3 features the following pin configuration: 1. Gate 1 2. Source 1 3. Drain 1 4. Source 2 5. Gate 2 6. Drain 2 7. NC (Not Connected) 8. GND

Functional Features

  • Dual N-channel MOSFETs
  • Low on-resistance for minimal power loss
  • Suitable for high current switching applications

Advantages and Disadvantages

Advantages

  • Fast switching speed
  • Low gate drive voltage requirement
  • Small package size for space-constrained designs

Disadvantages

  • Limited maximum drain-to-source voltage
  • Relatively low continuous drain current compared to some alternatives

Working Principles

SI5401DC-T1-E3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel between the source and drain terminals.

Detailed Application Field Plans

SI5401DC-T1-E3 is commonly used in various electronic devices and systems, including: - Power management circuits - Motor control applications - LED lighting drivers - Battery protection circuits

Detailed and Complete Alternative Models

Some alternative models to SI5401DC-T1-E3 include: - SI2301DS-T1-GE3 - SI2333DDS-T1-GE3 - SI2365DS-T1-GE3 - SI2391DS-T1-GE3

This completes the entry for SI5401DC-T1-E3, providing comprehensive information about its product details, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق SI5401DC-T1-E3 في الحلول التقنية

  1. What is the maximum voltage rating for SI5401DC-T1-E3?

    • The maximum voltage rating for SI5401DC-T1-E3 is 20V.
  2. What is the typical on-state resistance of SI5401DC-T1-E3?

    • The typical on-state resistance of SI5401DC-T1-E3 is 25mΩ.
  3. Can SI5401DC-T1-E3 be used in automotive applications?

    • Yes, SI5401DC-T1-E3 is suitable for automotive applications.
  4. What is the maximum continuous drain current for SI5401DC-T1-E3?

    • The maximum continuous drain current for SI5401DC-T1-E3 is 6.3A.
  5. Does SI5401DC-T1-E3 have over-temperature protection?

    • Yes, SI5401DC-T1-E3 features over-temperature protection.
  6. Is SI5401DC-T1-E3 RoHS compliant?

    • Yes, SI5401DC-T1-E3 is RoHS compliant.
  7. What is the operating temperature range for SI5401DC-T1-E3?

    • The operating temperature range for SI5401DC-T1-E3 is -55°C to 150°C.
  8. Can SI5401DC-T1-E3 be used in power management applications?

    • Yes, SI5401DC-T1-E3 is suitable for power management applications.
  9. What is the gate threshold voltage for SI5401DC-T1-E3?

    • The gate threshold voltage for SI5401DC-T1-E3 is typically 1V.
  10. Does SI5401DC-T1-E3 require an external freewheeling diode?

    • No, SI5401DC-T1-E3 has an integrated freewheeling diode.