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SI5475DC-T1-E3

SI5475DC-T1-E3

Product Overview

Category: Power MOSFET
Use: Switching applications
Characteristics: High efficiency, low on-resistance, small package size
Package: DFN-8 (2x2)
Essence: Power management
Packaging/Quantity: Tape and Reel, 3000 units

Specifications

  • Voltage - Drain-Source Breakdown (Min): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 2200pF @ 15V
  • Power Dissipation (Max): 2.5W

Detailed Pin Configuration

  1. Gate
  2. Source
  3. Drain
  4. NC
  5. NC
  6. NC
  7. Source
  8. Gate

Functional Features

  • Low on-resistance for high efficiency
  • Fast switching speed
  • Enhanced power management capabilities

Advantages

  • Small package size for space-constrained applications
  • High efficiency for power-saving designs
  • Suitable for various switching applications

Disadvantages

  • May require additional heat dissipation in high-power applications
  • Sensitivity to static electricity

Working Principles

The SI5475DC-T1-E3 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of applications including: - DC-DC converters - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

  • SI5476DC-T1-E3
  • SI5474DC-T1-E3
  • SI5480DC-T1-E3

In conclusion, the SI5475DC-T1-E3 Power MOSFET offers high efficiency and compact design, making it suitable for various switching applications in power management systems.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق SI5475DC-T1-E3 في الحلول التقنية

  1. What is the maximum voltage rating for SI5475DC-T1-E3?

    • The maximum voltage rating for SI5475DC-T1-E3 is typically 30V.
  2. What is the maximum current rating for SI5475DC-T1-E3?

    • The maximum continuous drain current for SI5475DC-T1-E3 is typically 12A.
  3. What is the typical on-resistance for SI5475DC-T1-E3?

    • The typical on-resistance for SI5475DC-T1-E3 is around 6.5mΩ.
  4. What are the recommended applications for SI5475DC-T1-E3?

    • SI5475DC-T1-E3 is commonly used in power management and load switching applications in various electronic devices.
  5. What is the operating temperature range for SI5475DC-T1-E3?

    • The operating temperature range for SI5475DC-T1-E3 is typically -55°C to 150°C.
  6. Does SI5475DC-T1-E3 require any external components for proper operation?

    • SI5475DC-T1-E3 may require external components such as resistors, capacitors, and inductors depending on the specific application and circuit design.
  7. Is SI5475DC-T1-E3 suitable for automotive applications?

    • Yes, SI5475DC-T1-E3 is designed to meet the requirements for automotive applications.
  8. What is the package type for SI5475DC-T1-E3?

    • SI5475DC-T1-E3 is typically available in a PowerPAK® SO-8 package.
  9. Are there any specific layout considerations for using SI5475DC-T1-E3 in a PCB design?

    • It is recommended to follow the layout guidelines provided in the datasheet to optimize performance and thermal characteristics.
  10. Where can I find detailed technical specifications and application notes for SI5475DC-T1-E3?

    • Detailed technical specifications and application notes for SI5475DC-T1-E3 can be found in the product datasheet available from the manufacturer's website or authorized distributors.