The SI5908DC-T1-GE3 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.
The SI5908DC-T1-GE3 features the following specifications: - Voltage Rating: 30V - Current Rating: 9.3A - On-Resistance: 12mΩ - Package Type: DFN - Operating Temperature Range: -55°C to 150°C - Gate Charge: 7.5nC - Power Dissipation: 2.5W
The pin configuration of the SI5908DC-T1-GE3 includes the following pins: 1. Gate 2. Source 3. Drain
The SI5908DC-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
The SI5908DC-T1-GE3 finds extensive use in the following application fields: - Power supplies - Motor control - LED lighting - Battery management systems
Some alternative models to the SI5908DC-T1-GE3 include: - SI5906DC-T1-GE3 - SI5907DC-T1-GE3 - SI5909DC-T1-GE3
In conclusion, the SI5908DC-T1-GE3 power MOSFET offers high-performance characteristics and versatile applications, making it an essential component in modern electronic systems.
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What is the maximum voltage rating for SI5908DC-T1-GE3?
What is the typical on-resistance of SI5908DC-T1-GE3?
What is the maximum continuous drain current for SI5908DC-T1-GE3?
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What is the operating temperature range for SI5908DC-T1-GE3?
Does SI5908DC-T1-GE3 have built-in ESD protection?
Is SI5908DC-T1-GE3 RoHS compliant?
What is the package type for SI5908DC-T1-GE3?
Can SI5908DC-T1-GE3 be used in power management applications?
What are the typical applications for SI5908DC-T1-GE3?