SI7655ADN-T1-GE3

Introduction

The SI7655ADN-T1-GE3 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: Switching and amplification in electronic circuits
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: DFN (Dual Flat No-Lead) package
• Essence: Efficient power management and control
• Packaging/Quantity: Typically available in reels of 3000 units

Specifications

• Voltage Rating: 100V
• Current Rating: 30A
• On-Resistance: 8mΩ
• Gate Threshold Voltage: 2V
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SI7655ADN-T1-GE3 features a standard pin configuration with the following pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low on-resistance for minimal power dissipation
• Fast switching speed for efficient operation
• High voltage capability for versatile applications
• Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages: - High voltage capability allows for use in diverse applications - Low on-resistance results in minimal power loss - Fast switching speed enables efficient operation

Disadvantages: - Sensitive to static electricity and voltage spikes - Requires careful handling during assembly and usage

Working Principles

The SI7655ADN-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material. When a suitable voltage is applied to the gate terminal, the device switches between its on and off states, allowing for effective control of current flow.

Detailed Application Field Plans

The SI7655ADN-T1-GE3 finds extensive use in the following application fields: - Power supplies and converters - Motor control systems - LED lighting - Battery management systems - Automotive electronics

Detailed and Complete Alternative Models

• SI7856BDN-T1-GE3: Similar specifications with enhanced thermal performance
• SI7455CDN-T1-GE3: Lower on-resistance for higher efficiency
• SI7755ADN-T1-GE3: Higher voltage rating for specific applications

In conclusion, the SI7655ADN-T1-GE3 power MOSFET offers high-performance characteristics and versatile applications, making it an essential component in modern electronic systems.

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