SIA466EDJ-T1-GE3

Introduction

The SIA466EDJ-T1-GE3 is a semiconductor product belonging to the category of power management and MOSFETs. This device is widely used in various electronic applications due to its unique characteristics and functional features. In this entry, we will provide an overview of the basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the SIA466EDJ-T1-GE3.

Basic Information Overview

• Category: Power Management and MOSFETs
• Use: The SIA466EDJ-T1-GE3 is used for power switching and amplification in electronic circuits.
• Characteristics: High voltage capability, low on-resistance, fast switching speed, and high reliability.
• Package: TO-220AB package
• Essence: The essence of SIA466EDJ-T1-GE3 lies in its ability to efficiently manage power in electronic devices.
• Packaging/Quantity: Typically packaged in reels with varying quantities based on customer requirements.

Specifications

• Voltage Rating: 100V
• Current Rating: 30A
• On-Resistance: 8mΩ
• Package Type: TO-220AB
• Operating Temperature Range: -55°C to 175°C
• Gate Charge: 45nC

Detailed Pin Configuration

The SIA466EDJ-T1-GE3 has a standard TO-220AB pin configuration with three pins: gate (G), drain (D), and source (S).

Functional Features

• High Voltage Capability: Allows the device to handle high voltage levels effectively.
• Low On-Resistance: Minimizes power loss and heat generation during operation.
• Fast Switching Speed: Enables quick response in power management applications.
• High Reliability: Ensures consistent performance and longevity in diverse operating conditions.

Advantages and Disadvantages

Advantages

• Efficient power management
• Low power dissipation
• Reliable performance
• Wide operating temperature range

Disadvantages

• Higher cost compared to standard MOSFETs
• Larger physical footprint

Working Principles

The SIA466EDJ-T1-GE3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate voltage, the device can effectively switch and regulate power flow in electronic circuits.

Detailed Application Field Plans

The SIA466EDJ-T1-GE3 finds extensive use in various applications, including: - Switching power supplies - Motor control systems - LED lighting - Audio amplifiers - Solar inverters

Detailed and Complete Alternative Models

• SIA456EDJ-T2-GE3: Similar specifications with enhanced thermal performance
• SIA476EDJ-T1-GE3: Higher voltage rating and lower on-resistance
• SIA486EDJ-T1-GE3: Lower gate charge and faster switching speed

In conclusion, the SIA466EDJ-T1-GE3 is a versatile power management MOSFET with robust characteristics and functional features, making it suitable for a wide range of electronic applications.

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