SIHB22N60AE-GE3

Product Category

The SIHB22N60AE-GE3 belongs to the category of power semiconductor devices.

Basic Information Overview

• Use: The SIHB22N60AE-GE3 is used as a high-voltage, fast-switching N-channel MOSFET for various power electronic applications.
• Characteristics: It features low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The SIHB22N60AE-GE3 is typically available in a TO-220AB package.
• Essence: Its essence lies in providing efficient power control and management in electronic circuits.
• Packaging/Quantity: It is commonly packaged in reels or tubes containing multiple units.

Specifications

• Voltage Rating: 600V
• Current Rating: 22A
• On-State Resistance: 0.22Ω
• Gate Charge: 44nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHB22N60AE-GE3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High voltage capability
• Fast switching speed
• Low conduction losses
• Low gate drive power

Advantages

• Enhanced power efficiency
• Reduced heat dissipation
• Improved system reliability

Disadvantages

• Sensitivity to overvoltage conditions
• Potential for gate oxide damage if mishandled

Working Principles

The SIHB22N60AE-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The SIHB22N60AE-GE3 finds extensive use in: - Switch-mode power supplies - Motor drives - Inverters - Power factor correction circuits

Detailed and Complete Alternative Models

1. SIHB22N60AE
   • Similar specifications and characteristics
2. IRFB22N60C
   • Comparable performance in power electronic applications

This comprehensive entry provides an in-depth understanding of the SIHB22N60AE-GE3, covering its category, basic information, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.