SIHB22N60S-E3

Product Overview

Category

The SIHB22N60S-E3 belongs to the category of power semiconductor devices.

Use

It is used for high-power applications such as motor drives, inverters, and power supplies.

Characteristics

• High voltage and current capability
• Low on-state resistance
• Fast switching speed
• High reliability

Package

The SIHB22N60S-E3 is typically available in a TO-220AB package.

Essence

This product is essential for efficient power management in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Voltage Rating: 600V
• Current Rating: 22A
• RDS(ON): 0.19Ω
• Gate Charge: 40nC
• Diode Forward Current: 22A
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHB22N60S-E3 has a standard TO-220AB pin configuration: 1. Source 2. Gate 3. Drain

Functional Features

• High voltage and current handling capacity
• Low conduction and switching losses
• Enhanced thermal performance

Advantages

• Efficient power management
• Suitable for high-power applications
• Reliable and durable

Disadvantages

• Higher cost compared to lower-rated devices
• Requires proper heat sinking for optimal performance

Working Principles

The SIHB22N60S-E3 operates based on the principles of field-effect transistors, utilizing its high voltage and current capabilities to control power flow in electronic circuits.

Detailed Application Field Plans

The SIHB22N60S-E3 is ideal for use in: - Motor drives for electric vehicles - Industrial inverters - Uninterruptible power supplies (UPS) - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the SIHB22N60S-E3 include: - IRF840 - STP22NE10L - FDPF22N10

In conclusion, the SIHB22N60S-E3 is a high-performance power semiconductor device suitable for demanding applications that require efficient power management and reliable operation.

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