SIHB8N50D-GE3

Introduction

The SIHB8N50D-GE3 is a power MOSFET belonging to the category of electronic components. This semiconductor device is widely used in various applications due to its unique characteristics and functional features.

Basic Information Overview

• Category: Power MOSFET
• Use: Switching and amplification in electronic circuits
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-220AB
• Essence: Semiconductor device for power management
• Packaging/Quantity: Typically packaged in reels or tubes, quantity varies by manufacturer

Specifications

• Voltage Rating: 500V
• Current Rating: 8A
• On-Resistance: 1.2Ω
• Gate Threshold Voltage: 2-4V
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHB8N50D-GE3 has a standard TO-220AB package with three pins: 1. Gate (G): Input terminal for controlling the MOSFET 2. Drain (D): Output terminal connected to the load 3. Source (S): Common terminal connected to ground

Functional Features

• Fast switching speed for efficient operation
• Low on-resistance leading to minimal power loss
• High voltage capability for versatile applications

Advantages and Disadvantages

Advantages

• Efficient power management
• Suitable for high voltage applications
• Fast response time

Disadvantages

• Higher cost compared to traditional transistors
• Sensitivity to static electricity

Working Principles

The SIHB8N50D-GE3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can effectively switch and amplify signals in electronic circuits.

Detailed Application Field Plans

The SIHB8N50D-GE3 finds extensive use in various applications including: - Switch mode power supplies - Motor control systems - Lighting ballasts - Audio amplifiers - Electronic inverters

Detailed and Complete Alternative Models

Some alternative models to the SIHB8N50D-GE3 include: - IRFB7440PbF - STW8N150K5 - FDPF8N60NZ

In conclusion, the SIHB8N50D-GE3 power MOSFET offers high voltage capability, fast switching speed, and efficient power management, making it an essential component in modern electronic systems.

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