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SIHD12N50E-GE3

SIHD12N50E-GE3

Product Category

The SIHD12N50E-GE3 belongs to the category of power MOSFETs.

Basic Information Overview

  • Use: The SIHD12N50E-GE3 is used as a power switch in various electronic applications.
  • Characteristics: It exhibits high voltage and current handling capabilities, low on-state resistance, and fast switching speeds.
  • Package: The SIHD12N50E-GE3 is typically available in a TO-252 package.
  • Essence: Its essence lies in providing efficient power management and control in electronic circuits.
  • Packaging/Quantity: It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 500V
  • Current Rating: 12A
  • On-State Resistance: 0.65Ω
  • Gate Threshold Voltage: 2.5V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHD12N50E-GE3 typically features three pins: 1. Gate (G): Used to control the switching of the MOSFET. 2. Drain (D): Connects to the load or circuit where the power is being delivered. 3. Source (S): Connected to the ground or return path for the current.

Functional Features

  • High voltage and current handling capacity
  • Low on-state resistance for minimal power loss
  • Fast switching speed for efficient power control

Advantages

  • Efficient power management
  • Low power dissipation
  • Fast response time

Disadvantages

  • Sensitivity to static electricity
  • Gate drive requirements

Working Principles

The SIHD12N50E-GE3 operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SIHD12N50E-GE3 finds application in various fields including: - Switching power supplies - Motor control - Lighting systems - Audio amplifiers

Detailed and Complete Alternative Models

  • SIHD12N50C-E3: Similar specifications with a different package type
  • SIHD12N50D-E3: Higher current rating variant
  • SIHD12N50F-E3: Lower on-state resistance variant

This comprehensive range of alternative models provides flexibility in design and application-specific requirements.

This entry provides a detailed overview of the SIHD12N50E-GE3, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

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  1. What is the maximum voltage rating of SIHD12N50E-GE3?

    • The maximum voltage rating of SIHD12N50E-GE3 is 500V.
  2. What is the maximum continuous drain current of SIHD12N50E-GE3?

    • The maximum continuous drain current of SIHD12N50E-GE3 is 12A.
  3. What type of package does SIHD12N50E-GE3 come in?

    • SIHD12N50E-GE3 comes in a TO-252-3 (DPAK) package.
  4. What is the on-resistance of SIHD12N50E-GE3?

    • The on-resistance of SIHD12N50E-GE3 is typically 0.45 ohms.
  5. Is SIHD12N50E-GE3 suitable for high-frequency switching applications?

    • Yes, SIHD12N50E-GE3 is suitable for high-frequency switching applications.
  6. What is the gate threshold voltage of SIHD12N50E-GE3?

    • The gate threshold voltage of SIHD12N50E-GE3 is typically 2.5V.
  7. Does SIHD12N50E-GE3 have built-in protection features?

    • Yes, SIHD12N50E-GE3 has built-in overcurrent and thermal protection features.
  8. What is the operating temperature range of SIHD12N50E-GE3?

    • The operating temperature range of SIHD12N50E-GE3 is -55°C to 150°C.
  9. Can SIHD12N50E-GE3 be used in automotive applications?

    • Yes, SIHD12N50E-GE3 is suitable for use in automotive applications.
  10. Is SIHD12N50E-GE3 RoHS compliant?

    • Yes, SIHD12N50E-GE3 is RoHS compliant.