SIHG24N65E-E3

Product Overview

Category

The SIHG24N65E-E3 belongs to the category of power MOSFETs.

Use

It is used for high-voltage, high-speed power switching applications.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The SIHG24N65E-E3 comes in a TO-247 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

The SIHG24N65E-E3 is typically packaged in reels and available in varying quantities depending on the supplier.

Specifications

• Drain-Source Voltage (VDS): 650V
• Continuous Drain Current (ID): 24A
• On-Resistance (RDS(on)): 0.19 Ohms
• Gate-Source Voltage (VGS): ±20V
• Total Gate Charge (Qg): 60nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHG24N65E-E3 has a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).

Functional Features

• High voltage capability allows for use in various power applications.
• Low on-resistance minimizes power loss and improves efficiency.
• Fast switching speed enables rapid power control.

Advantages

• Suitable for high-voltage applications
• Low power dissipation
• Enhanced system efficiency

Disadvantages

• May require additional circuitry for driving the gate due to high gate charge

Working Principles

The SIHG24N65E-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SIHG24N65E-E3 is commonly used in: - Switched-mode power supplies - Motor drives - Inverters - Power factor correction circuits

Detailed and Complete Alternative Models

• SIHG24N60E-E3
• SIHG24N50E-E3
• SIHG24N40E-E3

In conclusion, the SIHG24N65E-E3 power MOSFET offers high-voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power switching applications. Its advantages include enhanced system efficiency and low power dissipation, while its main disadvantage lies in the potential need for additional gate driving circuitry. This MOSFET finds extensive use in switched-mode power supplies, motor drives, inverters, and power factor correction circuits. Additionally, alternative models such as the SIHG24N60E-E3, SIHG24N50E-E3, and SIHG24N40E-E3 provide flexibility in design and application.