SIHP35N60E-GE3
Product Overview
Category
The SIHP35N60E-GE3 belongs to the category of power semiconductor devices.
Use
It is used for high-power applications such as motor drives, inverters, and power supplies.
Characteristics
- High voltage and current handling capability
- Low on-state resistance
- Fast switching speed
- Robust and reliable performance
Package
The SIHP35N60E-GE3 is typically available in a TO-220AB package.
Essence
This product is essential for efficient power management in various electronic systems.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on customer requirements.
Specifications
- Voltage Rating: 600V
- Current Rating: 35A
- On-State Resistance: 0.15Ω
- Gate Threshold Voltage: 2.5V
- Maximum Operating Temperature: 150°C
Detailed Pin Configuration
The SIHP35N60E-GE3 features a standard TO-220AB pin configuration: 1. Gate 2. Drain 3. Source
Functional Features
- High voltage blocking capability
- Low conduction losses
- Enhanced thermal performance
- Compatibility with high-frequency switching
Advantages
- Efficient power handling
- Reduced heat dissipation
- Improved system reliability
- Suitable for high-frequency operation
Disadvantages
- Higher cost compared to lower-rated devices
- Requires careful thermal management in high-power applications
Working Principles
The SIHP35N60E-GE3 operates based on the principles of field-effect transistors (FETs), utilizing its ability to control current flow through the manipulation of electric fields within the semiconductor material.
Detailed Application Field Plans
The SIHP35N60E-GE3 is ideal for use in: - Motor drives for electric vehicles - Industrial power inverters - Uninterruptible power supplies (UPS) - Renewable energy systems
Detailed and Complete Alternative Models
- IRFP460: Similar voltage and current ratings
- STW45NM50: Comparable characteristics and package type
- FDPF33N25T: Alternative with lower current rating but similar performance
In conclusion, the SIHP35N60E-GE3 is a versatile power semiconductor device that offers high-performance characteristics suitable for a wide range of high-power applications.
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What is the maximum voltage rating of SIHP35N60E-GE3?
- The maximum voltage rating of SIHP35N60E-GE3 is 600V.
What is the maximum continuous drain current of SIHP35N60E-GE3?
- The maximum continuous drain current of SIHP35N60E-GE3 is 35A.
What is the on-state resistance (RDS(on)) of SIHP35N60E-GE3?
- The on-state resistance (RDS(on)) of SIHP35N60E-GE3 is typically 0.065 ohms.
What type of package does SIHP35N60E-GE3 come in?
- SIHP35N60E-GE3 comes in a TO-220AB package.
What are the typical applications for SIHP35N60E-GE3?
- SIHP35N60E-GE3 is commonly used in applications such as motor drives, inverters, and power supplies.
Is SIHP35N60E-GE3 suitable for high-frequency switching applications?
- Yes, SIHP35N60E-GE3 is suitable for high-frequency switching due to its low RDS(on) and fast switching characteristics.
Does SIHP35N60E-GE3 have built-in protection features?
- SIHP35N60E-GE3 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What is the operating temperature range of SIHP35N60E-GE3?
- The operating temperature range of SIHP35N60E-GE3 is typically -55°C to 150°C.
Can SIHP35N60E-GE3 be used in automotive applications?
- Yes, SIHP35N60E-GE3 is suitable for use in automotive applications, provided it meets the specific requirements and standards for automotive electronics.
Are there any recommended thermal management considerations for using SIHP35N60E-GE3?
- It is recommended to use appropriate heat sinks and thermal interface materials to manage the heat dissipation of SIHP35N60E-GE3 in high-power applications.