SIR404DP-T1-GE3

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high-current switching circuits
Characteristics: High efficiency, low on-resistance, fast switching speed
Package: DPAK (TO-252)
Essence: Power MOSFET for high-current switching applications
Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Drain-Source Voltage (V_DSS): 40V
• Continuous Drain Current (I_D): 11A
• R_DS(ON) (Max) @ V_GS: 8.5mΩ @ 10V
• Gate-Source Voltage (V_GS)(Max): ±20V
• Total Gate Charge (Q_{G</sub): 16nC}

Detailed Pin Configuration

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Functional Features

• Low on-resistance for minimal power dissipation
• Fast switching speed for improved efficiency
• Robust construction for reliable performance

Advantages

• High efficiency in power switching applications
• Low on-resistance reduces power loss
• Fast switching speed improves overall system performance

Disadvantages

• Higher cost compared to standard MOSFETs
• Requires careful handling due to ESD sensitivity

Working Principles

The SIR404DP-T1-GE3 operates by controlling the flow of current between the drain and source terminals using the gate voltage. When a sufficient gate-source voltage is applied, the MOSFET allows current to flow, and when the gate voltage is removed, the current flow ceases.

Detailed Application Field Plans

1. Power Supplies: Used in DC-DC converters and voltage regulation circuits.
2. Motor Control: Employed in motor drive circuits for efficient speed and direction control.
3. High-Current Switching Circuits: Ideal for applications requiring high-current switching such as automotive systems and industrial controls.

Detailed and Complete Alternative Models

1. SIR403DP-T1-GE3: Similar specifications with a lower continuous drain current of 9A.
2. SIR405DP-T1-GE3: Higher continuous drain current of 13A with comparable characteristics.

This comprehensive entry provides detailed information about the SIR404DP-T1-GE3 Power MOSFET, including its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.