قد تكون الصورة تمثيلية.
راجع المواصفات للحصول على تفاصيل المنتج.
SIRA96DP-T1-GE3

SIRA96DP-T1-GE3

Introduction

The SIRA96DP-T1-GE3 is a high-performance power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and functional features.

Basic Information Overview

  • Category: Semiconductor Device
  • Use: Power MOSFET for electronic applications
  • Characteristics: High performance, low power consumption, fast switching speed
  • Package: TO-252-3 (DPAK)
  • Essence: Efficient power management and control
  • Packaging/Quantity: Typically packaged in reels of 2500 units

Specifications

  • Voltage Rating: 60V
  • Current Rating: 96A
  • On-State Resistance: 1.8mΩ
  • Gate Charge: 42nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SIRA96DP-T1-GE3 follows the standard pin configuration for a TO-252-3 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • High Current Capability: The device can handle high current loads, making it suitable for power applications.
  • Low On-State Resistance: This results in minimal power loss and efficient operation.
  • Fast Switching Speed: Enables rapid response in switching applications.

Advantages and Disadvantages

Advantages

  • High current handling capability
  • Low power dissipation
  • Fast switching speed

Disadvantages

  • Limited voltage rating compared to some other power MOSFETs
  • Sensitivity to overvoltage conditions

Working Principles

The SIRA96DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The SIRA96DP-T1-GE3 finds extensive use in various applications, including: - Switching power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

  • SIRA44DP-T1-GE3: Lower current rating but similar characteristics
  • SIRA120DP-T1-GE3: Higher current rating with comparable specifications
  • SIRA96EP-T1-GE3: Enhanced power dissipation capabilities

In conclusion, the SIRA96DP-T1-GE3 power MOSFET offers high performance and efficiency, making it a valuable component in a wide range of electronic applications.

[Word Count: 314]

قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق SIRA96DP-T1-GE3 في الحلول التقنية

  1. What is the maximum operating temperature of SIRA96DP-T1-GE3?

    • The maximum operating temperature of SIRA96DP-T1-GE3 is 150°C.
  2. What is the typical output capacitance of SIRA96DP-T1-GE3?

    • The typical output capacitance of SIRA96DP-T1-GE3 is 3000pF.
  3. What is the drain-source voltage rating of SIRA96DP-T1-GE3?

    • The drain-source voltage rating of SIRA96DP-T1-GE3 is 30V.
  4. What is the typical on-resistance of SIRA96DP-T1-GE3?

    • The typical on-resistance of SIRA96DP-T1-GE3 is 6.5mΩ.
  5. What are the typical applications for SIRA96DP-T1-GE3?

    • SIRA96DP-T1-GE3 is commonly used in power management and load switching applications.
  6. What is the maximum continuous drain current of SIRA96DP-T1-GE3?

    • The maximum continuous drain current of SIRA96DP-T1-GE3 is 120A.
  7. Does SIRA96DP-T1-GE3 have built-in ESD protection?

    • Yes, SIRA96DP-T1-GE3 features built-in ESD protection.
  8. What is the gate threshold voltage of SIRA96DP-T1-GE3?

    • The gate threshold voltage of SIRA96DP-T1-GE3 is typically 2.5V.
  9. Is SIRA96DP-T1-GE3 suitable for automotive applications?

    • Yes, SIRA96DP-T1-GE3 is suitable for automotive applications due to its high temperature and current ratings.
  10. What package type does SIRA96DP-T1-GE3 come in?

    • SIRA96DP-T1-GE3 is available in a PowerPAK® SO-8 package.