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SIRA96DP-T1-GE3
Introduction
The SIRA96DP-T1-GE3 is a high-performance power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and functional features.
Basic Information Overview
- Category: Semiconductor Device
- Use: Power MOSFET for electronic applications
- Characteristics: High performance, low power consumption, fast switching speed
- Package: TO-252-3 (DPAK)
- Essence: Efficient power management and control
- Packaging/Quantity: Typically packaged in reels of 2500 units
Specifications
- Voltage Rating: 60V
- Current Rating: 96A
- On-State Resistance: 1.8mΩ
- Gate Charge: 42nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The SIRA96DP-T1-GE3 follows the standard pin configuration for a TO-252-3 package:
1. Source (S)
2. Gate (G)
3. Drain (D)
Functional Features
- High Current Capability: The device can handle high current loads, making it suitable for power applications.
- Low On-State Resistance: This results in minimal power loss and efficient operation.
- Fast Switching Speed: Enables rapid response in switching applications.
Advantages and Disadvantages
Advantages
- High current handling capability
- Low power dissipation
- Fast switching speed
Disadvantages
- Limited voltage rating compared to some other power MOSFETs
- Sensitivity to overvoltage conditions
Working Principles
The SIRA96DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
Detailed Application Field Plans
The SIRA96DP-T1-GE3 finds extensive use in various applications, including:
- Switching power supplies
- Motor control
- LED lighting
- Battery management systems
Detailed and Complete Alternative Models
- SIRA44DP-T1-GE3: Lower current rating but similar characteristics
- SIRA120DP-T1-GE3: Higher current rating with comparable specifications
- SIRA96EP-T1-GE3: Enhanced power dissipation capabilities
In conclusion, the SIRA96DP-T1-GE3 power MOSFET offers high performance and efficiency, making it a valuable component in a wide range of electronic applications.
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What is the maximum operating temperature of SIRA96DP-T1-GE3?
- The maximum operating temperature of SIRA96DP-T1-GE3 is 150°C.
What is the typical output capacitance of SIRA96DP-T1-GE3?
- The typical output capacitance of SIRA96DP-T1-GE3 is 3000pF.
What is the drain-source voltage rating of SIRA96DP-T1-GE3?
- The drain-source voltage rating of SIRA96DP-T1-GE3 is 30V.
What is the typical on-resistance of SIRA96DP-T1-GE3?
- The typical on-resistance of SIRA96DP-T1-GE3 is 6.5mΩ.
What are the typical applications for SIRA96DP-T1-GE3?
- SIRA96DP-T1-GE3 is commonly used in power management and load switching applications.
What is the maximum continuous drain current of SIRA96DP-T1-GE3?
- The maximum continuous drain current of SIRA96DP-T1-GE3 is 120A.
Does SIRA96DP-T1-GE3 have built-in ESD protection?
- Yes, SIRA96DP-T1-GE3 features built-in ESD protection.
What is the gate threshold voltage of SIRA96DP-T1-GE3?
- The gate threshold voltage of SIRA96DP-T1-GE3 is typically 2.5V.
Is SIRA96DP-T1-GE3 suitable for automotive applications?
- Yes, SIRA96DP-T1-GE3 is suitable for automotive applications due to its high temperature and current ratings.
What package type does SIRA96DP-T1-GE3 come in?
- SIRA96DP-T1-GE3 is available in a PowerPAK® SO-8 package.