SISS26DN-T1-GE3

Product Overview

SISS26DN-T1-GE3 belongs to the category of power MOSFETs and is commonly used in electronic circuits for switching and amplification. This MOSFET offers high efficiency, low on-resistance, and fast switching speed. It is typically packaged in a small outline package (SOP) and is available in quantities suitable for both prototyping and production.

Specifications

• Voltage Rating: 30V
• Current Rating: 20A
• Package Type: SOP-8
• On-Resistance: 4.5mΩ
• Switching Speed: 10ns

Pin Configuration

The detailed pin configuration for SISS26DN-T1-GE3 is as follows: 1. Gate 2. Source 3. Source 4. Source 5. Drain 6. Drain 7. Drain 8. Drain

Functional Features

• High Efficiency: SISS26DN-T1-GE3 offers high efficiency in electronic circuits, reducing power loss.
• Fast Switching Speed: The MOSFET has a fast switching speed, making it suitable for applications requiring rapid switching.

Advantages and Disadvantages

Advantages: - Low On-Resistance: The low on-resistance of 4.5mΩ minimizes power dissipation. - Small Package: The SOP-8 package is compact, saving space on the circuit board.

Disadvantages: - Voltage Limitation: The voltage rating of 30V may not be suitable for high-voltage applications.

Working Principles

SISS26DN-T1-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the current flow between the source and drain terminals. When a sufficient voltage is applied to the gate, the MOSFET switches on, allowing current to flow through it.

Application Field Plans

SISS26DN-T1-GE3 is commonly used in various applications such as: - Power Supplies - Motor Control - LED Lighting - Battery Management Systems

Alternative Models

Some alternative models to SISS26DN-T1-GE3 include: - SISS25DN-T1-GE3 - SISS27DN-T1-GE3 - SISS28DN-T1-GE3

In conclusion, SISS26DN-T1-GE3 is a versatile power MOSFET with high efficiency and fast switching speed, suitable for a wide range of electronic applications.

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