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SISS72DN-T1-GE3

SISS72DN-T1-GE3

Introduction

The SISS72DN-T1-GE3 is a semiconductor product belonging to the category of power MOSFETs. This device is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Power switching and amplification in electronic circuits
  • Characteristics: High voltage capability, low on-resistance, fast switching speed
  • Package: DFN (Dual Flat No-Lead)
  • Essence: Efficient power management and control
  • Packaging/Quantity: Tape and reel packaging, quantity varies based on supplier

Specifications

The SISS72DN-T1-GE3 features the following specifications: - Drain-Source Voltage (VDS): 100V - Continuous Drain Current (ID): 72A - On-Resistance (RDS(on)): 4.5mΩ - Gate-Source Voltage (VGS): ±20V - Total Gate Charge (Qg): 50nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The pin configuration of SISS72DN-T1-GE3 is as follows: - Pin 1: Gate - Pin 2: Source - Pin 3: Drain - Pin 4: Source

Functional Features

The functional features of SISS72DN-T1-GE3 include: - High voltage capability for power applications - Low on-resistance leading to reduced power dissipation - Fast switching speed enabling efficient power control

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for diverse applications
  • Low on-resistance for improved efficiency
  • Fast switching speed for precise power control

Disadvantages

  • Sensitivity to static electricity and overvoltage conditions
  • Heat dissipation challenges at high current levels

Working Principles

The SISS72DN-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SISS72DN-T1-GE3 finds extensive application in various fields including: - Power supplies - Motor control systems - Renewable energy systems - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to SISS72DN-T1-GE3 include: - SISS75DN-T1-GE3 - SISS70DN-T1-GE3 - SISS80DN-T1-GE3 - SISS85DN-T1-GE3

In conclusion, the SISS72DN-T1-GE3 power MOSFET offers high-performance characteristics and versatile applications, making it a valuable component in modern electronic systems.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق SISS72DN-T1-GE3 في الحلول التقنية

  1. What is the maximum drain-source voltage of SISS72DN-T1-GE3?

    • The maximum drain-source voltage of SISS72DN-T1-GE3 is 30V.
  2. What is the typical on-resistance of SISS72DN-T1-GE3?

    • The typical on-resistance of SISS72DN-T1-GE3 is 7.2mΩ.
  3. What is the maximum continuous drain current of SISS72DN-T1-GE3?

    • The maximum continuous drain current of SISS72DN-T1-GE3 is 120A.
  4. Can SISS72DN-T1-GE3 be used in automotive applications?

    • Yes, SISS72DN-T1-GE3 is suitable for automotive applications.
  5. What is the operating temperature range of SISS72DN-T1-GE3?

    • The operating temperature range of SISS72DN-T1-GE3 is -55°C to 175°C.
  6. Does SISS72DN-T1-GE3 have overcurrent protection?

    • Yes, SISS72DN-T1-GE3 features overcurrent protection.
  7. Is SISS72DN-T1-GE3 RoHS compliant?

    • Yes, SISS72DN-T1-GE3 is RoHS compliant.
  8. What is the gate threshold voltage of SISS72DN-T1-GE3?

    • The gate threshold voltage of SISS72DN-T1-GE3 is typically 2.5V.
  9. Can SISS72DN-T1-GE3 be used in power management applications?

    • Yes, SISS72DN-T1-GE3 is suitable for power management applications.
  10. What package type does SISS72DN-T1-GE3 come in?

    • SISS72DN-T1-GE3 comes in a D2PAK-7 package.