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SQD19P06-60L_T4GE3

SQD19P06-60L_T4GE3

Product Overview

Category

The SQD19P06-60L_T4GE3 belongs to the category of power MOSFETs.

Use

It is used for controlling and switching electronic signals in various power applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SQD19P06-60L_T4GE3 is available in a TO-252 (DPAK) package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

The SQD19P06-60L_T4GE3 is typically packaged in reels and is available in varying quantities based on customer requirements.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 19A
  • On-Resistance (RDS(on)): 60mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 18nC
  • Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

The SQD19P06-60L_T4GE3 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications
  • Low on-resistance minimizes power loss and improves efficiency
  • Fast switching speed enables rapid control of electronic signals
  • Low gate charge reduces drive requirements and enhances performance

Advantages

  • Suitable for high voltage applications
  • Low power dissipation
  • Enhanced efficiency in power management systems

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during installation

Working Principles

The SQD19P06-60L_T4GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SQD19P06-60L_T4GE3 is commonly used in: - Power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the SQD19P06-60L_T4GE3 include: - IRF9540N - FQP27P06 - NDP6020P

In conclusion, the SQD19P06-60L_T4GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an essential component in various power applications.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق SQD19P06-60L_T4GE3 في الحلول التقنية

  1. What is the maximum drain-source voltage of SQD19P06-60L_T4GE3?

    • The maximum drain-source voltage of SQD19P06-60L_T4GE3 is 60 volts.
  2. What is the continuous drain current rating of SQD19P06-60L_T4GE3?

    • The continuous drain current rating of SQD19P06-60L_T4GE3 is 19 amperes.
  3. What is the on-resistance of SQD19P06-60L_T4GE3?

    • The on-resistance of SQD19P06-60L_T4GE3 is typically 0.06 ohms.
  4. What is the gate threshold voltage of SQD19P06-60L_T4GE3?

    • The gate threshold voltage of SQD19P06-60L_T4GE3 is typically 2 to 4 volts.
  5. What are the typical applications for SQD19P06-60L_T4GE3?

    • SQD19P06-60L_T4GE3 is commonly used in power management, motor control, and other high-current switching applications.
  6. What is the maximum junction temperature of SQD19P06-60L_T4GE3?

    • The maximum junction temperature of SQD19P06-60L_T4GE3 is 175 degrees Celsius.
  7. What is the package type of SQD19P06-60L_T4GE3?

    • SQD19P06-60L_T4GE3 comes in a TO-252 (DPAK) package.
  8. Is SQD19P06-60L_T4GE3 suitable for automotive applications?

    • Yes, SQD19P06-60L_T4GE3 is suitable for automotive applications due to its high current handling capability and robust design.
  9. Does SQD19P06-60L_T4GE3 require a heat sink for operation?

    • Depending on the application and power dissipation, a heat sink may be required for optimal performance of SQD19P06-60L_T4GE3.
  10. What are the key advantages of using SQD19P06-60L_T4GE3 in technical solutions?

    • Some key advantages of using SQD19P06-60L_T4GE3 include low on-resistance, high current handling capability, and suitability for various high-power applications.