Triode/MOS tube/transistor/module

P-channel, -30V, -25A, 9mΩ@-10V

PNP, Vceo=-30V, Ic=-800mA, hfe=150~300

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Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 25V Collector current (Ic): 1.5A Power (Pd): 500mW Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE(sat )@Ic,Ib): 500mV@800mA, 80mA DC current gain (hFE@Ic,Vce): 400@100mA, 1V Characteristic frequency (fT): 100MHz

Drain-source voltage (Vdss): 650V Continuous drain current (Id): 38A MOS tube

N-channel, 600V, 12A, 600mΩ@10V

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