onsemi (Ansemi)
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NCP5109BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V

NCP5109BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V
رقم القطعة
NCP5109BDR2G
فئة
Power Chip > Gate Driver IC
الشركة المصنعة/العلامة التجارية
onsemi (Ansemi)
التغليف
SOIC-8
التعبئة
taping
عدد الطرود
2500
وصف
The NCP5109 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
طلب اقتباس
يرجى إكمال جميع الحقول المطلوبة والنقر على "إرسال"، وسنتصل بك خلال 12 ساعة عبر البريد الإلكتروني. إذا كانت لديك أي مشكلة، فيرجى ترك رسائل أو إرسال بريد إلكتروني إلى [email protected]، سوف نقوم بالرد في أقرب وقت ممكن.
في الأوراق المالية 81488 PCS
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الكلمات الرئيسية لNCP5109BDR2G
NCP5109BDR2G مكونات الكترونية
NCP5109BDR2G مبيعات
NCP5109BDR2G المورد
NCP5109BDR2G موزع
NCP5109BDR2G جدول البيانات
NCP5109BDR2G الصور
NCP5109BDR2G سعر
NCP5109BDR2G يعرض
NCP5109BDR2G أقل سعر
NCP5109BDR2G يبحث
NCP5109BDR2G شراء
NCP5109BDR2G رقاقة