FQB3N90TM
Introduction
The FQB3N90TM is a power MOSFET belonging to the category of electronic components. This device is commonly used in various electronic applications due to its unique characteristics and performance.
Basic Information Overview
- Category: Power MOSFET
- Use: Electronic applications requiring high power switching
- Characteristics: High voltage capability, low on-resistance, fast switching speed
- Package: TO-263-3 (D2PAK)
- Essence: Efficient power management
- Packaging/Quantity: Typically packaged in reels or tubes, quantity varies based on manufacturer
Specifications
The FQB3N90TM features the following specifications: - Voltage Rating: 900V - Current Rating: 3A - On-Resistance: 3.8Ω - Gate Threshold Voltage: 2-4V - Operating Temperature: -55°C to 150°C
Detailed Pin Configuration
The FQB3N90TM follows the standard pin configuration for a TO-263-3 package: 1. Source 2. Gate 3. Drain
Functional Features
- High voltage capability allows for use in high-power applications
- Low on-resistance minimizes power loss and heat generation
- Fast switching speed enables efficient power management
Advantages and Disadvantages
Advantages
- High voltage capability
- Low on-resistance
- Fast switching speed
Disadvantages
- Higher cost compared to lower voltage MOSFETs
- Sensitive to static electricity and overvoltage conditions
Working Principles
The FQB3N90TM operates based on the principle of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device. When a sufficient gate voltage is applied, the MOSFET allows current to flow between the drain and source terminals.
Detailed Application Field Plans
The FQB3N90TM finds application in various fields including: - Switching power supplies - Motor control - Inverters - LED lighting - Audio amplifiers
Detailed and Complete Alternative Models
Some alternative models to the FQB3N90TM include: - IRF840 - STP3NB90 - FQP3N90
In conclusion, the FQB3N90TM power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of electronic applications requiring efficient power management.
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