SIHG17N80E-GE3

Product Overview

Category

The SIHG17N80E-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power electronics applications such as switch mode power supplies, motor control, and inverters.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• High reliability

Package

The SIHG17N80E-GE3 is typically available in a TO-220AB package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Voltage Rating: 800V
• Current Rating: 17A
• RDS(ON): 0.38Ω
• Gate Charge: 35nC
• Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The SIHG17N80E-GE3 features a standard pin configuration with three pins: gate (G), drain (D), and source (S).

Functional Features

• Low conduction losses
• High efficiency
• Enhanced thermal performance
• Robustness against overcurrent and overvoltage conditions

Advantages

• Reduced power dissipation
• Improved system efficiency
• Enhanced reliability
• Suitable for high-power applications

Disadvantages

• Higher cost compared to traditional bipolar transistors
• Sensitivity to electrostatic discharge (ESD)

Working Principles

The SIHG17N80E-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

1. Switch Mode Power Supplies: Enables efficient power conversion and regulation.
2. Motor Control: Facilitates precise and responsive control of motor speed and direction.
3. Inverters: Supports the conversion of DC power to AC power for various applications.

Detailed and Complete Alternative Models

• IRFP460: Similar voltage and current ratings
• STP16NF06: Comparable characteristics and package type
• FDPF18N50: Alternative option with similar specifications

In conclusion, the SIHG17N80E-GE3 power MOSFET offers high-performance characteristics suitable for a wide range of power electronics applications. Its advanced features contribute to improved system efficiency and reliability, making it a valuable component in modern electronic designs.

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