HXY MOSFET (Huaxuanyang Electronics)

SMA

taping

2000

Diode configuration: Independent DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 1A Forward voltage drop (Vf): 1.7V@1A Reverse current (Ir): 5uA@1kV Reverse recovery time ( trr): 70ns Operating temperature: -65℃~+150℃@(Tj)